advanced power n-channel enhancement mode electronics corp. power mosfet bottom exposed dfn bv dss 30v low on-resistance r ds(on) 27m lower profile i d 5.5a absolute maximum ratings symbol parameter rating units v ds drain-source voltage v v gs gate-source voltage v i d @t a =25 continuous drain current 3 a i d @t a =70 continuous drain current 3 a i dm pulsed drain current 1 a p d @t a =25 total power dissipation 1.25 w linear derating factor 0.01 w/ t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 thermal data symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 100 /w data and specifications subject to change without notice 201120072 parameter 1 AP2428GN3 rohs-compliant product 30 10 5.5 4.4 20 dfn3*3 g1 s1 g2 s2 d1 d1 d2 d2 s1 g1 d1 s2 g2 d2 d1 d2
n-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v b breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.02 - v/ r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =5a - - 27 m v gs =2.5v, i d =3a - - 33 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.3 - 1.2 v g fs forward transconductance v ds =5v, i d =5a - 5 - s i dss drain-source leakage current (t j =25 o c) v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs =10v - - 30 ua q g total gate charge 2 i d =5a - 11 18 nc q gs gate-source charge v ds =25v - 1.2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 3.8 - nc t d(on) turn-on delay time 2 v ds =15v - 3.5 - ns t r rise time i d =1a - 8.5 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 25 - ns t f fall time r d =15 - 4.5 - ns c iss input capacitance v gs =0v - 545 870 pf c oss output capacitance v ds =25v - 110 - pf c rss reverse transfer capacitance f=1.0mhz - 80 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1a, v gs =0v - - 1.3 v trr reverse recovery time 2 i s =5a, v gs =0v, - 28 - ns qrr reverse recovery charge di/dt=100a/s - 21 - nc 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted fr4 board, t Q 5s. this product is an electrostatic sensitive, please handle with caution. device or system are not authorized. 2 this product has been qualified for consumer market. applications or uses as criterial component in life support AP2428GN3
AP2428GN3 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. on-resistance vs. reverse diode drain current 3 0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 2 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c v g =2.5v 4.0v 5.0v 4.5v 0 4 8 12 16 20 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 4.0v v g =2.5v 4.5v 5.0v 0 2 4 6 8 0 0.4 0.8 1.2 1.6 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) v g =4.5v i d =5a 20 30 40 50 60 12345 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =3a t a =25 o c 3.5v 3.5v 20.0 22.0 24.0 26.0 28.0 30.0 32.0 0 4 8 12 16 20 i d , drain current (a) r ds(on) (m ? ) v gs =4.5v v gs =2.5v
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 AP2428GN3 0 2 4 6 8 10 0102030 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =15v v ds =20v v ds =25v i d =5a 10 100 1000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz ciss coss crss 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 1s 1ms 10ms 100ms dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a t t rthja = 180 0 4 8 12 16 20 0123 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v
package outline : t/dfn(3*3) millimeters min nom max dfn 0.80 0.85 0.90 tdfn 0.70 0.75 0.80 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : t/dfn(3*3) symbols advanced power electronics corp. a foot print date code (ywws) y last digit of the year ww week s sequence 2428 ywws part number 0.47 0.23 1.70 0.23 5
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